4v drive nch mosfet RSD050N10 ? structure ? dimensions (unit : mm) silicon n-c hannel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 3) parallel use is easy. ? applications switching ? packaging specifications ? inner circuit package cpt3 code tl basic ordering unit (pieces) 2500 ? absolute maximum ratings (t a =25c) symbol limits unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v continuous i d ? 5.0 a pulsed i dp ? 20 a continuous i s 5.0 a pulsed i sp 20 a power dissipation p d 15 w channel temperature t ch 150 c range of storage temperature t stg ? 55 to +150 c *1 pw Q 10? s, duty cycle Q 1% *2 t c =25c ? thermal resistance symbol limits unit channel to case r th (ch-c) 8.33 c / w * t c =25 ? c parameter type source current (body diode) drain current parameter *1 *1 * cpt3 (sc-63) y ? ? ? e ? e ? y ? ? ? e ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?05 ? ? ? *1 *2 (1) gate (2) drain (3) source * 1 esd protection diode * 2 body diode ?2 ?1 (1) (2) (3) 1/6 2012.02 - rev.b www.rohm.com ?2012 rohm co., ltd. all rights reserved.
RSD050N10 ? electrical characteristics (t a =25c) symbol min. typ. max. unit gate-source leakage i gss -- 10 ? av gs = 20v, v ds =0v drain-source breakdown voltage v (br)dss 100 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --10 ? av ds =100v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 135 190 i d =5.0a, v gs =10v - 142 200 i d =5.0a, v gs =4.5v - 145 205 i d =5.0a, v gs =4.0v forward transfer admittance l y fs l 2.5 - - s i d =5.0a, v ds =10v input capacitance c iss - 530 - pf v ds =25v output capacitance c oss -50-pfv gs =0v reverse transfer capacitance c rss - 30 - pf f=1mhz turn-on delay time t d(on) -10-nsi d =2.5a, v dd 50v rise time t r -15-nsv gs =10v turn-off delay time t d(off) -45-nsr l =20 ? fall time t f -15-nsr g =10 ? total gate charge q g -14-ncv dd 50v gate-source charge q gs -1.7-nci d =5.0a, gate-drain charge q gd -3.0-ncv gs =10v *pulsed ? body diode characteristics (source-drain) (t a =25c) symbol min. typ. max. unit forward voltage v sd --1.2vi s =5.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 2/6 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
RSD050N10 ? electrical characteristic curves (t a =25 ?c) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain-source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v t a =25 c pulsed v gs =10.0v v gs =4.0v v gs =3.0v 0 1 2 3 4 5 0246810 drain current : i d [a] drain-source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =3.0v t a =25 c pulsed 100 1000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ? ] drain current : i d [a] fig.3 static drain-source on-state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 10 100 1000 10000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ? ] drain current : i d [a] fig.5 static drain-source on-state resistance vs. drain current v gs =4.5v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 10 100 1000 10000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ? ] drain current : i d [a] fig.6 static drain-source on-state resistance vs. drain current v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 10 100 1000 10000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ? ] drain current : i d [a] fig.4 static drain-source on-state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 3/6 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
RSD050N10 0.01 0.1 1 10 100 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate-source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source current : is [a] source-drain voltage : v sd [v] fig.9 source current vs. source-drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a =-25 c 0 100 200 300 400 500 0246810 static drain-source on-state resistance r ds(on) [m ? ] gate-source voltage : v gs [v] fig.10 static drain-source on-state resistance vs. gate-source voltage t a =25 c pulsed i d =5.0a i d =2.5a 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P50v v gs =10v r g =10 ? t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 gate-source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =50v i d =5a pulsed 4/6 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
RSD050N10 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain-source voltage : v ds [v] fig.13 typical capacitance vs. drain-source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain current : i d [ a ] drain-source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse mounted on a ceramic board. 30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t c =25 c single pulse rth (ch-a) =8.33 c/w rth (ch-a) (t)=r(t) rth (ch-a) 5/6 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
RSD050N10 ? measurement circuits fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.2-1 gate charge measurement circuit v gs i g(const.) v ds d.u.t. i d r l v dd 6/6 2012.02 - rev.b www.rohm.com ? 2012 rohm co., ltd. all rights reserved. datasheet
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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